Skip to Main content Skip to Navigation
Journal articles

Modeling and Simulation of SEU in Bulk Si and Ge SRAM

Abstract : In this work, the random-walk drift-diffusion (RWDD) model has been coupled to a circuit simulator to investigate single event upsets (SEU) induced by alpha particles in SRAM cells with silicon or germanium as bulk material. The impact of semiconductor charge generation and transport properties on the SEU mechanisms is quantified and discussed in a first-order approach considering ideal materials and generic devices. Our results suggest that the radiation response of Ge-based SRAM should be similar to the one observed for Si-SRAM, the benefits of higher mobilities at circuit level for germanium offsetting the negative impact of a relatively low energy value for electron-pair creation on transient current pulse magnitudes.
Complete list of metadata

Cited literature [13 references]  Display  Hide  Download

https://hal-amu.archives-ouvertes.fr/hal-02263527
Contributor : Daniela Munteanu <>
Submitted on : Tuesday, November 10, 2020 - 10:58:25 AM
Last modification on : Monday, March 29, 2021 - 3:08:10 PM
Long-term archiving on: : Friday, February 12, 2021 - 12:15:46 PM

File

MRel_2019_SRAM_Ge_HAL.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran. Modeling and Simulation of SEU in Bulk Si and Ge SRAM. Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113390. ⟨10.1016/j.microrel.2019.06.082⟩. ⟨hal-02263527⟩

Share

Metrics

Record views

105

Files downloads

35