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Lattice and grain-boundary diffusion of As in Ni2Si

I. Blum 1 A. Portavoce 2 D. Mangelinck 2 R. Daineche K. Hoummada 2 J. Lábár V. Carron 3 C. Perrin 4 
1 GPM - Groupe de physique des matériaux
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 CRLCC - CRLCC Eugène Marquis
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https://hal-amu.archives-ouvertes.fr/hal-02386151
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:03:11 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:01 PM

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CEA | UNIV-TLN | CNRS | UNIV-AMU | INSA-ROUEN | FNCLCC | MARQUIS | COMUE-NORMANDIE | IM2NP | DRT | GPM | LETI | UNIROUEN | INSA-GROUPE | CEA-GRE

Citation

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, et al.. Lattice and grain-boundary diffusion of As in Ni2Si. Journal of Applied Physics, American Institute of Physics, 2008, 104 (11), pp.114312. ⟨10.1063/1.3035836⟩. ⟨hal-02386151⟩

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