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Lattice and grain-boundary diffusion of As in Ni2Si

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https://hal-amu.archives-ouvertes.fr/hal-02386151
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 11:03:11 AM
Last modification on : Thursday, June 11, 2020 - 5:04:07 PM

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I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, et al.. Lattice and grain-boundary diffusion of As in Ni2Si. Journal of Applied Physics, American Institute of Physics, 2008, 104 (11), pp.114312. ⟨10.1063/1.3035836⟩. ⟨hal-02386151⟩

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