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Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities

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https://hal-amu.archives-ouvertes.fr/hal-02386291
Contributor : Alain Portavoce <>
Submitted on : Friday, November 29, 2019 - 11:39:47 AM
Last modification on : Saturday, November 30, 2019 - 1:44:32 AM

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I. Berbezier, A. Ronda, A. Portavoce, N. Motta. Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities. Applied Physics Letters, American Institute of Physics, 2003, 83 (23), pp.4833-4835. ⟨10.1063/1.1633012⟩. ⟨hal-02386291⟩

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