Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities

I. Berbezier; A. Ronda; A. Portavoce; N. Motta

doi:10.1063/1.1633012

Journal articles

Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities

I. Berbezier ¹ A. Ronda ² A. Portavoce ¹ N. Motta

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

2 L2MP - Laboratoire matériaux et microélectronique de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02386291
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Friday, November 29, 2019 - 11:39:47 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities

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Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities

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