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Nucleation and evolution of SiGe islands on Si(001)

Abstract : In this study, we report a systematic investigation of the metastable morphologies of Si Ge layers obtained by the interplay 1yx x Ž. of kinetics and thermodynamics during growth on Si 001. We show that three main growth regimes can be distinguished as a function of the misfit and of the deposited thickness. They correspond to three equilibrium steady state morphologies that consist Ž. of 105-facetted hut islands, huts and domes in coexistence , and a bimodal size distribution of domes, respectively. The shape transitions between these states are attributed to different levels of relaxation. ᮊ
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F. Volpi, A. Portavoce, A. Ronda, Y Shi, J. Gay, et al.. Nucleation and evolution of SiGe islands on Si(001). Thin Solid Films, Elsevier, 2000, 380, pp.46 - 50. ⟨10.1016/S0040-6090(00)01526-1⟩. ⟨hal-02393911⟩

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