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Journal Articles Defect and Diffusion Forum Year : 2007

Dopant diffusion during amorphous silicon crystallization


We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 10 20 at cm −3. Crystallization leads to a non "Fickian" redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most concentrated in B. The B and P interactions are interpreted as chemical interactions.
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hal-02406682 , version 1 (12-12-2019)


  • HAL Id : hal-02406682 , version 1


A. Portavoce, R Simola, D. Mangelinck, J. Bernardini, P. Fornara. Dopant diffusion during amorphous silicon crystallization. Defect and Diffusion Forum, 2007, 264, pp.33-38. ⟨hal-02406682⟩
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