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Dopant diffusion during amorphous silicon crystallization

Abstract : We have investigated the redistribution of B during the crystallization of an amorphous Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower than 2 × 10 20 at cm −3. Crystallization leads to a non "Fickian" redistribution, allowing an abrupt interface between the regions doped and undoped with B. Once the crystallization is ended, B diffuses through the layer in the type B regime with a coefficient which is in agreement with the literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most concentrated in B. The B and P interactions are interpreted as chemical interactions.
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Submitted on : Thursday, December 12, 2019 - 11:09:05 AM
Last modification on : Monday, December 14, 2020 - 3:08:16 AM
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  • HAL Id : hal-02406682, version 1



A. Portavoce, R Simola, D. Mangelinck, J. Bernardini, P. Fornara. Dopant diffusion during amorphous silicon crystallization. Defect and Diffusion Forum, Trans Tech Publications, 2007, 264, pp.33-38. ⟨hal-02406682⟩



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