Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

R. Simola (1) , Dominique Mangelinck (1) , A. Portavoce (1) , J. Bernardini (1) , P. Fornara (2)

1 L2MP - Laboratoire matériaux et microélectronique de Provence
2 ST Microlectronics

The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 °C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 °C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.

Keywords: Boron; Phosphorus; amorphous Silicon; Crystallization; Diffusion

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

R. Simola, Dominique Mangelinck, A. Portavoce, J. Bernardini, P. Fornara. Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon. AIP Conference Proceedings, 2006, 866. ⟨hal-02406692⟩