Journal articles
Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon
Abstract : The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 °C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 °C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.
Cited literature [25 references]
https://hal-amu.archives-ouvertes.fr/hal-02406692
Contributor : Alain Portavoce <>
Submitted on : Thursday, December 12, 2019 - 11:11:45 AM
Last modification on : Monday, December 14, 2020 - 3:08:16 AM
Long-term archiving on: : Friday, March 13, 2020 - 10:16:19 PM
Contributor : Alain Portavoce <>
Submitted on : Thursday, December 12, 2019 - 11:11:45 AM
Last modification on : Monday, December 14, 2020 - 3:08:16 AM
Long-term archiving on: : Friday, March 13, 2020 - 10:16:19 PM