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Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

Abstract : The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 °C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 °C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.
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Submitted on : Thursday, December 12, 2019 - 11:11:45 AM
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  • HAL Id : hal-02406692, version 1



R. Simola, Dominique Mangelinck, A. Portavoce, J. Bernardini, P. Fornara. Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon. AIP Conference Proceedings, American Institute of Physics, 2006, 866. ⟨hal-02406692⟩



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