Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing

Alain Bravaix (1) , D. Vuillaume , D. Goguenheim , D. Dorval , M. Haond

1 Institut supérieur de l'électronique et du numérique (ISEN)

The hot-carrier reliability in p+ poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and localized electron injections. The effects of bidirectionally DC-(AC) stressing on the saturated (linear) - mode transistor parameters are monitored as they represent the worst limitating factor in pass transistors for digital logic applications. With a proper RTA condition and nitridation ambient, it is found that the gate-oxide process obtained by low-pressure plasma nitridation shows better hot-carrier immunity than pure oxide with a significant reduction of charge trapping.

Mots clés: Hot-Carrier; Nitrided oxide; p-MOSFET; AC stressing; pass Transistor

Domaines: Sciences de l'ingénieur [physics]

Alain Bravaix, D. Vuillaume, D. Goguenheim, D. Dorval, M. Haond. Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing. Microelectronic Engineering, 1995, Microelectronic Engineering, 28 (1-4), ⟨10.1016/0167-9317(95)00058-G⟩. ⟨hal-03022975⟩