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Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing

Abstract : The hot-carrier reliability in p+ poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and localized electron injections. The effects of bidirectionally DC-(AC) stressing on the saturated (linear) - mode transistor parameters are monitored as they represent the worst limitating factor in pass transistors for digital logic applications. With a proper RTA condition and nitridation ambient, it is found that the gate-oxide process obtained by low-pressure plasma nitridation shows better hot-carrier immunity than pure oxide with a significant reduction of charge trapping.
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https://hal-amu.archives-ouvertes.fr/hal-03022975
Contributor : Alain Bravaix <>
Submitted on : Wednesday, November 25, 2020 - 9:43:23 AM
Last modification on : Wednesday, November 25, 2020 - 9:43:24 AM

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Alain Bravaix, D. Vuillaume, D. Goguenheim, D. Dorval, M. Haond. Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing. Microelectronic Engineering, Elsevier, 1995, Microelectronic Engineering, 28 (1-4), ⟨10.1016/0167-9317(95)00058-G⟩. ⟨hal-03022975⟩

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