A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides - Archive ouverte HAL Access content directly
Journal Articles Microelectronic Engineering Year : 1997

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

D. Goguenheim
  • Function : Author
Alain Bravaix
  • Function : Author
  • PersonId : 1041446
F. Mondon
  • Function : Author
P. Candelierd
  • Function : Author
M. Jourdaine
  • Function : Author
A. Meinertzhagen
  • Function : Author

Abstract

Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFET's after homogeneous FOWLER-NORDHEIM injections under high field stress (<9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are used to monitor the degradation in correlation to the Charge-Pumping (CP) technique. A systematic increase is found in SILC at low field (4–8 MV/cm) up to two orders of magnitude after FN injections and we report on the observation of SILC after localized hot hole injection. We find a correlation between the SILC increase and the interface state (Nit) generation. No trapped charge is detected in 5 nm-thick gate oxides during FN stresses but the presence of slow states is evidenced, supporting a tunneling process through neutral oxide traps as a model for SILC.

Dates and versions

hal-03023026 , version 1 (25-11-2020)

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D. Goguenheim, Alain Bravaix, D. Vuillaume, F. Mondon, P. Candelierd, et al.. A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides. Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.141-144. ⟨10.1016/S0167-9317(97)00035-X⟩. ⟨hal-03023026⟩
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