Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2019

Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

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1
Maxim Hayes
  • Function : Author
Benoit Martel
  • Function : Author
Giri Wahyu Alam
  • Function : Author
Hélène Lignier
  • Function : Author
Sébastien Dubois
  • Function : Author
  • PersonId : 759029
  • IdRef : 159358787
Etienne Pihan
  • Function : Author
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hal-03350049 , version 1 (21-09-2021)

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Maxim Hayes, Benoit Martel, Giri Wahyu Alam, Hélène Lignier, Sébastien Dubois, et al.. Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells. physica status solidi (a), 2019, 216 (17), pp.1900321. ⟨10.1002/pssa.201900321⟩. ⟨hal-03350049⟩
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