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Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

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https://hal-amu.archives-ouvertes.fr/hal-03350049
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Tuesday, September 21, 2021 - 10:03:25 AM
Last modification on : Wednesday, November 3, 2021 - 7:27:35 AM

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Maxim Hayes, Benoit Martel, Giri Wahyu Alam, Hélène Lignier, Sébastien Dubois, et al.. Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells. physica status solidi (a), Wiley, 2019, 216 (17), pp.1900321. ⟨10.1002/pssa.201900321⟩. ⟨hal-03350049⟩

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