Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

Maxim Hayes; Benoit Martel; Giri Wahyu Alam; Hélène Lignier; Sébastien Dubois; Etienne Pihan; Olivier Palais

doi:10.1002/pssa.201900321

Journal Articles physica status solidi (a) Year : 2019

Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

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Maxim Hayes

Function : Author

Benoit Martel

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Giri Wahyu Alam

Function : Author

Hélène Lignier

Function : Author

Sébastien Dubois

Function : Author
PersonId : 759029
IdRef : 159358787

Etienne Pihan

Function : Author

Olivier Palais

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Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Physics [physics]

Olivier Palais : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-03350049

Submitted on : Tuesday, September 21, 2021-10:03:25 AM

Last modification on : Wednesday, November 3, 2021-7:27:35 AM

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hal-03350049 , version 1 (21-09-2021)

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HAL Id : hal-03350049 , version 1
DOI : 10.1002/pssa.201900321

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Maxim Hayes, Benoit Martel, Giri Wahyu Alam, Hélène Lignier, Sébastien Dubois, et al.. Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells. physica status solidi (a), 2019, 216 (17), pp.1900321. ⟨10.1002/pssa.201900321⟩. ⟨hal-03350049⟩

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Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

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