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Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron

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https://hal-amu.archives-ouvertes.fr/hal-03350134
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Tuesday, September 21, 2021 - 10:32:00 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

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F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, et al.. Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩. ⟨hal-03350134⟩

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