Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron

F. Issa (1) , V. Vervisch (1) , L. Ottaviani (1) , D. Szalkai , L. Vermeeren , A. Lyoussi (2) , A. Kuznetsov , M. Lazar , A. Klix , O. Palais (1) , A. Hallen

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA Cadarache

Domains: Physics [physics]

F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, et al.. Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron. IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩. ⟨hal-03350134⟩