New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement

M. Toure , B. Berenguier (1) , L. Ottaviani (1) , M. Pasquinelli (1) , O. Palais (1) , P. Di Lauro , M. Portail , S Chenot , T. Wood , D. Kobor

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

ABSTRACT An actual trend to enhance solar cells efficiency is to build multijunction cells, creating a bandshape wavelength collection. However, the best multijuction cells are actually made of III-V compounds when silicon and its alloys don’t lead to high efficiency devices. In this article, we study a 3C-SiC/Si heterojunction as a first step for 3C-SiC/Si tandem cells. Four samples were fabricated by depositing 3C-SiC on Si wafers with different SiC doping levels. Simulations of the structures are performed, as well as optical and electrical characterizations of the heterojunction cells.

Domains: Physics [physics]

M. Toure, B. Berenguier, L. Ottaviani, M. Pasquinelli, O. Palais, et al.. New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement. MRS Online Proceedings Library, 2014, 1693, ⟨10.1557/opl.2014.611⟩. ⟨hal-03350140⟩