Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

B. Rezgui; A. Sibai; T. Nychyporuk; M. Lemiti; G. Bremond; D. Maestre; O. Palais

doi:10.1063/1.3427386

Journal Articles Applied Physics Letters Year : 2010

Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

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1

B. Rezgui

Function : Author

A. Sibai

Function : Author

T. Nychyporuk

Function : Author
PersonId : 751178
IdHAL : tetyana-nychyporuk
ORCID : 0000-0002-8699-5664
IdRef : 115000135

M. Lemiti

Function : Author

G. Bremond

Function : Author

D. Maestre

Function : Author

O. Palais

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Physics [physics]

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https://hal-amu.archives-ouvertes.fr/hal-03350227

Submitted on : Tuesday, September 21, 2021-10:50:33 AM

Last modification on : Friday, March 24, 2023-2:53:22 PM

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hal-03350227 , version 1 (21-09-2021)

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HAL Id : hal-03350227 , version 1
DOI : 10.1063/1.3427386

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B. Rezgui, A. Sibai, T. Nychyporuk, M. Lemiti, G. Bremond, et al.. Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films. Applied Physics Letters, 2010, 96 (18), pp.183105. ⟨10.1063/1.3427386⟩. ⟨hal-03350227⟩

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Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

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