Skip to Main content Skip to Navigation
Journal articles

Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon

Abstract : In this work the efficiencies of different surface passivation techniques are compared. This paper emphasizes on the passivation provided by SiNx:H layers that is commonly used in photovolaic industry as surface passivation and anti reflection layer. The method used to evaluate the surface recombination velocity is detailed and discussed. It is shown that light phosphorus diffusion at 850°C – 20 min provides good surface passivation of n-type silicon surface and noticeable passivation of p-type, that can be improved by SiNx:H Layer.
Document type :
Journal articles
Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-03350286
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Tuesday, September 21, 2021 - 11:10:25 AM
Last modification on : Wednesday, September 22, 2021 - 3:40:32 AM

Identifiers

Citation

Olivier Palais, Mustapha Lemiti, Jean-Francois Lelievre, Santo Martinuzzi. Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon. Solid State Phenomena, Trans Tech Publications Ltd 2005, 108-109, pp.585-590. ⟨10.4028/www.scientific.net/SSP.108-109.585⟩. ⟨hal-03350286⟩

Share

Metrics

Record views

58