Journal articles
Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers
Abstract : This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10−15 cm2 s−1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value
Cited literature [32 references]
https://hal-amu.archives-ouvertes.fr/hal-01199539
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Submitted on : Tuesday, September 15, 2015 - 3:24:24 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:00 PM
Long-term archiving on: : Tuesday, December 29, 2015 - 7:16:56 AM
Contributor : Administrateur Hal Amu Connect in order to contact the contributor
Submitted on : Tuesday, September 15, 2015 - 3:24:24 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:00 PM
Long-term archiving on: : Tuesday, December 29, 2015 - 7:16:56 AM
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srep12641.pdf
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