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Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices

Abstract : Opening the way to large bandwidths and high data rates Silicon Photonics is of great interest. In the scope of co-integrating III-V devices with CMOS very large scale integration (VLSI), innovative contacts to III-V materials have to be developed. In this paper we study the metallurgical and electrical properties of Ni-based metallizations to n-InP and p-InGaAs. It appears that the integration of both metallizations must be realized at temperatures lower than or equal to 340 °C starting with that on n-InP.
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https://hal-amu.archives-ouvertes.fr/hal-01436604
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Submitted on : Monday, January 16, 2017 - 3:46:36 PM
Last modification on : Thursday, March 15, 2018 - 4:56:07 PM

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E. Ghegin, F. Nemouchi, C. Perrin, K. Hoummada, J. Lázár, et al.. Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. ⟨10.1109/SNW.2016.7578056⟩. ⟨hal-01436604⟩

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