Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices

E. Ghegin , F. Nemouchi , C. Perrin (1) , K. Hoummada (1) , J. Lázár , S. Zhiou , Ph. Rodriguez , I. Sagnes (2) , C. Jany

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 LPN - Laboratoire de photonique et de nanostructures

Opening the way to large bandwidths and high data rates Silicon Photonics is of great interest. In the scope of co-integrating III-V devices with CMOS very large scale integration (VLSI), innovative contacts to III-V materials have to be developed. In this paper we study the metallurgical and electrical properties of Ni-based metallizations to n-InP and p-InGaAs. It appears that the integration of both metallizations must be realized at temperatures lower than or equal to 340 °C starting with that on n-InP.

Domaines: Micro et nanotechnologies/Microélectronique

E. Ghegin, F. Nemouchi, C. Perrin, K. Hoummada, J. Lázár, et al.. Metallurgical studies of integrable Ni-based contacts for their use in III–V/Si heterogeneous photonics devices. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. ⟨10.1109/SNW.2016.7578056⟩. ⟨hal-01436604⟩