Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives

G. Piccolboni , M. Parise , G. Molas , A. Levisse (1, 2) , Jean-Michel Portal (1) , R. Coquand , C. Carabasse , M. Bernard , A. Roule , J.P. Noel , B. Giraud , M. Harrand , C. Cagli , T. Magis , E. Vianello , B. de Salvo , G. Ghibaudo (3) , L. Perniola

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

In this paper, we propose the integration of an Al2O3/CuTex based Conductive Bridge RAM (CBRAM) device in vertical configuration. The performances of the memory devices are evaluated. 20ns switching time, up to 106 cycles and stable 150°C retention were demonstrated. Functionality is compared with Vertical RRAM integrating an HfO2/Ti OXRAM stack, showing the pros and cons of each configuration. Then 2 potential applications are discussed using design approach. For high density, the Vertical RRAM cell features and circuit are dimensioned to optimize the memory page density. Finally, for neuromorphic applications, selector and array configuration are tuned to reduce the variability in terms of voltage seen by each cell constituting a vertical synapse.

Domaines: Micro et nanotechnologies/Microélectronique

G. Piccolboni, M. Parise, G. Molas, A. Levisse, Jean-Michel Portal, et al.. Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives. 2016 IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495296⟩. ⟨hal-01451884⟩