Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon - Archive ouverte HAL Access content directly
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Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon

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hal-01454802 , version 1 (03-02-2017)

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  • HAL Id : hal-01454802 , version 1

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T. David, K. Liu, Luc Favre, A. Ronda, Marco Abbarchi, et al.. Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon. International Conference on Nanostructures and nanomaterials self-assembly (NanoSEA), Jul 2016, Griadini Naxos, Italy. ⟨hal-01454802⟩
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