Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface

Christian Chatillon; Dominique Chatain

doi:10.1016/0022-0248(95)00044-5

Journal Articles Journal of Crystal Growth Year : 1995

Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface

(1) ,

1

Christian Chatillon

Function : Author

Science et Ingénierie des Matériaux et Procédés

Dominique Chatain

Function : Author
PersonId : 18129
IdHAL : dominique-chatain
ORCID : 0000-0002-9654-7291
IdRef : 084054719

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Materials Science [cond-mat.mtrl-sci]

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https://hal-amu.archives-ouvertes.fr/hal-01786369

Submitted on : Saturday, May 5, 2018-3:01:19 PM

Last modification on : Friday, March 24, 2023-2:53:07 PM

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hal-01786369 , version 1 (05-05-2018)

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HAL Id : hal-01786369 , version 1
DOI : 10.1016/0022-0248(95)00044-5

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Christian Chatillon, Dominique Chatain. Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface. Journal of Crystal Growth, 1995, 151 (1-2), pp.91 - 101. ⟨10.1016/0022-0248(95)00044-5⟩. ⟨hal-01786369⟩

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Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface

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