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High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy

Alain Jean Degiovanni 1 J.L. Guyaux A. Thiry R. Caudano 
1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
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Submitted on : Friday, December 21, 2018 - 5:02:30 PM
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  • HAL Id : hal-01963935, version 1

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Alain Jean Degiovanni, J.L. Guyaux, A. Thiry, R. Caudano. High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy. Surface Science, Elsevier, 1991, 251-252, pp.238-242. ⟨hal-01963935⟩

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