High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy - Archive ouverte HAL Access content directly
Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 1991

High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy

Alain Jean Degiovanni
Centre Interdisciplinaire de Nanoscience de Marseille
J.L. Guyaux
  • Function : Author
A. Thiry
  • Function : Author
R. Caudano
  • Function : Author

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

alain degiovanni  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-01963935

Submitted on : Friday, December 21, 2018-5:02:30 PM

Last modification on : Thursday, March 9, 2023-2:26:29 PM

Not file

Dates and versions

hal-01963935 , version 1 (21-12-2018)

Identifiers

  • HAL Id : hal-01963935 , version 1

Cite

Alain Jean Degiovanni, J.L. Guyaux, A. Thiry, R. Caudano. High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1991, 251-252, pp.238-242. ⟨hal-01963935⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

CNRS UNIV-AMU CINAM
9 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More