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High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy

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https://hal-amu.archives-ouvertes.fr/hal-01963935
Contributor : Alain Degiovanni <>
Submitted on : Friday, December 21, 2018 - 5:02:30 PM
Last modification on : Tuesday, March 5, 2019 - 5:04:03 PM

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  • HAL Id : hal-01963935, version 1

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Alain Degiovanni, J.L. Guyaux, A. Thiry, R. Caudano. High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy. Surface Science, Elsevier, 1991, 251-252, pp.238-242. ⟨hal-01963935⟩

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