High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy - Archive ouverte HAL Access content directly
Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 1991

High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy

J.L. Guyaux
  • Function : Author
A. Thiry
  • Function : Author
R. Caudano
  • Function : Author
Not file

Dates and versions

hal-01963935 , version 1 (21-12-2018)

Identifiers

  • HAL Id : hal-01963935 , version 1

Cite

Alain Jean Degiovanni, J.L. Guyaux, A. Thiry, R. Caudano. High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1991, 251-252, pp.238-242. ⟨hal-01963935⟩
9 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More