Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate - Archive ouverte HAL Access content directly
Journal Articles Surface Review and Letters Year : 1998

Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate

J.-M. Gay
Centre Interdisciplinaire de Nanoscience de Marseille
L. Lapena
Centre Interdisciplinaire de Nanoscience de Marseille
M. Ladevèze
  • Function : Author
M. Tolan
  • Function : Author
Technische Universität Dortmund [Dortmund]

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

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https://hal-amu.archives-ouvertes.fr/hal-01964075

Submitted on : Friday, December 21, 2018-5:31:38 PM

Last modification on : Friday, March 24, 2023-2:53:09 PM

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hal-01964075 , version 1 (21-12-2018)

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  • HAL Id : hal-01964075 , version 1

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J.-M. Gay, L. Lapena, M. Ladevèze, M. Tolan. Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate. Surface Review and Letters, 1998, 05 (01), pp.31-36. ⟨hal-01964075⟩

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