AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys

J Nyéki; Christophe Girardeaux; Z Erdélyi; G.A Langer; G Erdélyi; D.L Beke; A Rolland

Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 2001

AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys

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J Nyéki

Function : Author

Christophe Girardeaux

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PersonId : 172869
IdHAL : christophe-girardeaux
ORCID : 0000-0002-7159-3785
IdRef : 078779375

Z Erdélyi

Function : Author

G.A Langer

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G Erdélyi

Function : Author

D.L Beke

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A Rolland

Function : Author

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Christophe Girardeaux : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02045037

Submitted on : Thursday, February 21, 2019-5:42:02 PM

Last modification on : Thursday, March 9, 2023-2:26:29 PM

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hal-02045037 , version 1 (21-02-2019)

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HAL Id : hal-02045037 , version 1

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J Nyéki, Christophe Girardeaux, Z Erdélyi, G.A Langer, G Erdélyi, et al.. AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 495 (3), pp.195-203. ⟨hal-02045037⟩

AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys

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