Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation - Aix-Marseille Université Access content directly
Book Sections Year : 2014

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Daniela Munteanu
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
Jean-Luc Autran

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Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-02119405

Submitted on : Friday, May 3, 2019-5:18:19 PM

Last modification on : Friday, March 24, 2023-2:53:10 PM

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hal-02119405 , version 1 (03-05-2019)

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Daniela Munteanu, Jean-Luc Autran. Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation. J. Awrejcewicz. Computational and Numerical Simulations, INTECH, 2014, ⟨10.5772/57048⟩. ⟨hal-02119405⟩

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