HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02385306
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Thursday, November 28, 2019 - 5:12:28 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM

Identifiers

Collections

Citation

Anthony de Luca, Michael Texier, Alain Portavoce, Nelly Burle, Catherine Grosjean, et al.. Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, American Institute of Physics, 2015, 117 (11), pp.115302. ⟨10.1063/1.4915086⟩. ⟨hal-02385306⟩

Share

Metrics

Record views

31