Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Anthony de Luca; Michael Texier; Alain Portavoce; Nelly Burle; Catherine Grosjean; Stéphane Morata; Fabrice Michel

doi:10.1063/1.4915086

Journal articles

Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Anthony de Luca ¹ Michael Texier ¹ Alain Portavoce ¹ Nelly Burle ¹ Catherine Grosjean Stéphane Morata Fabrice Michel ²

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

2 Service d'anesthésie et de réanimation [Hôpital de la Timone - APHM]

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

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https://hal-amu.archives-ouvertes.fr/hal-02385306
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Thursday, November 28, 2019 - 5:12:28 PM
Last modification on : Tuesday, March 30, 2021 - 3:23:58 AM

Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

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Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

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