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Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

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https://hal-amu.archives-ouvertes.fr/hal-02385306
Contributor : Alain Portavoce <>
Submitted on : Thursday, November 28, 2019 - 5:12:28 PM
Last modification on : Friday, November 29, 2019 - 2:31:47 AM

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Anthony de Luca, Michael Texier, Alain Portavoce, Nelly Burle, Catherine Grosjean, et al.. Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, American Institute of Physics, 2015, 117 (11), pp.115302. ⟨10.1063/1.4915086⟩. ⟨hal-02385306⟩

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