Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2015

Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02385306

Submitted on : Thursday, November 28, 2019-5:12:28 PM

Last modification on : Tuesday, October 19, 2021-11:00:04 PM

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hal-02385306 , version 1 (28-11-2019)

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Anthony de Luca, Michael Texier, Alain Portavoce, Nelly Burle, Catherine Grosjean, et al.. Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 2015, 117 (11), pp.115302. ⟨10.1063/1.4915086⟩. ⟨hal-02385306⟩

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