Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2015

Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

(1) , (1) , (1) , (1) , , , (2)
1
2
Not file

Dates and versions

hal-02385306 , version 1 (28-11-2019)

Identifiers

Cite

Anthony de Luca, Michael Texier, Alain Portavoce, Nelly Burle, Catherine Grosjean, et al.. Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 2015, 117 (11), pp.115302. ⟨10.1063/1.4915086⟩. ⟨hal-02385306⟩
35 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More