Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

Khalid Hoummada (1) , Gamra Tellouche , Ivan Blum (1) , Alain Portavoce (1) , Marion Descoins (1) , Dominique Mangelinck (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

Khalid Hoummada, Gamra Tellouche, Ivan Blum, Alain Portavoce, Marion Descoins, et al.. Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact. Microelectronic Engineering, 2013, 107, pp.184-189. ⟨10.1016/j.mee.2012.12.008⟩. ⟨hal-02385371⟩