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Reactive Diffusion of Thin Si Deposits into Ni (111)

B. Lalmi 1 C. Girardeaux Alain Portavoce 2 Bernard Aufray 3 Jean Bernardini 2
1 LENAC - Laboratoire d'Electronique, Nanotechnologies, Capteurs
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
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https://hal-amu.archives-ouvertes.fr/hal-02393979
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Wednesday, December 4, 2019 - 3:47:24 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:01 PM

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UNIV-AMU | IM2NP | CINAM | UNIV-LYON1 | UNIV-TLN | CNRS | UDL

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B. Lalmi, C. Girardeaux, Alain Portavoce, Bernard Aufray, Jean Bernardini. Reactive Diffusion of Thin Si Deposits into Ni (111). Defect and Diffusion Forum, Trans Tech Publications, 2012, 323-325, pp.421-426. ⟨10.4028/www.scientific.net/DDF.323-325.421⟩. ⟨hal-02393979⟩

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