Journal Articles
Defect and Diffusion Forum
Year : 2012
Alain Portavoce : Connect in order to contact the contributor
https://hal-amu.archives-ouvertes.fr/hal-02393979
Submitted on : Wednesday, December 4, 2019-3:47:24 PM
Last modification on : Tuesday, October 19, 2021-11:00:01 PM
Dates and versions
Identifiers
- HAL Id : hal-02393979 , version 1
- DOI : 10.4028/www.scientific.net/DDF.323-325.421
Cite
B. Lalmi, C. Girardeaux, Alain Portavoce, Bernard Aufray, Jean Bernardini. Reactive Diffusion of Thin Si Deposits into Ni (111). Defect and Diffusion Forum, 2012, 323-325, pp.421-426. ⟨10.4028/www.scientific.net/DDF.323-325.421⟩. ⟨hal-02393979⟩
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