Reactive Diffusion of Thin Si Deposits into Ni (111)

B. Lalmi; C. Girardeaux; Alain Portavoce; Bernard Aufray; Jean Bernardini

doi:10.4028/www.scientific.net/DDF.323-325.421

Journal Articles Defect and Diffusion Forum Year : 2012

Reactive Diffusion of Thin Si Deposits into Ni (111)

(1) , , (2) , (3) , (2)

1
2
3

B. Lalmi

Function : Author

Laboratoire d'Electronique, Nanotechnologies, Capteurs

C. Girardeaux

Function : Author

Alain Portavoce

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Bernard Aufray

Function : Author

Centre Interdisciplinaire de Nanoscience de Marseille

Jean Bernardini

Function : Author
PersonId : 856690

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Alain Portavoce : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02393979

Submitted on : Wednesday, December 4, 2019-3:47:24 PM

Last modification on : Tuesday, October 19, 2021-11:00:01 PM

Dates and versions

hal-02393979 , version 1 (04-12-2019)

Identifiers

HAL Id : hal-02393979 , version 1
DOI : 10.4028/www.scientific.net/DDF.323-325.421

Cite

B. Lalmi, C. Girardeaux, Alain Portavoce, Bernard Aufray, Jean Bernardini. Reactive Diffusion of Thin Si Deposits into Ni (111). Defect and Diffusion Forum, 2012, 323-325, pp.421-426. ⟨10.4028/www.scientific.net/DDF.323-325.421⟩. ⟨hal-02393979⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

UNIV-TLN CNRS UNIV-AMU UNIV-LYON1 IM2NP CINAM UDL

27 View

0 Download

Reactive Diffusion of Thin Si Deposits into Ni (111)

Domains

Dates and versions

Identifiers

Cite

Export

Collections

Altmetric

Share