Skip to Main content Skip to Navigation
Journal articles

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Abstract : During the past years, our team developed an original lifetime measurement method for semiconductors wafers, called microwave phase-shift (µW-PS). It was successfully employed to determinate bulk lifetime and surface recombination velocities on silicon. We recently adapted the method to silicon carbide (SiC), using a continuous UV laser and acousto-optic modulator. The theory is presented, using the standard continuity equation in n-type 4H-SiC. The proposed measurement setup firstly allows to estimate a bulk lifetime ranging from 2.3 to 6.7 µs.
Document type :
Journal articles
Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-03350123
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Tuesday, September 21, 2021 - 10:27:45 AM
Last modification on : Wednesday, September 22, 2021 - 3:24:37 AM

Identifiers

Collections

Citation

Baptiste Berenguier, Olivier Palais, Sylvain Bertaina, Laurent Ottaviani, A. Lyoussi. Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.337-340. ⟨10.4028/www.scientific.net/MSF.858.337⟩. ⟨hal-03350123⟩

Share

Metrics

Record views

49