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Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

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https://hal-amu.archives-ouvertes.fr/hal-03350260
Contributor : Olivier Palais Connect in order to contact the contributor
Submitted on : Tuesday, September 21, 2021 - 11:01:12 AM
Last modification on : Wednesday, September 22, 2021 - 3:24:33 AM

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S. Dubois, O. Palais, P. Ribeyron. Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon. Applied Physics Letters, American Institute of Physics, 2006, 89 (23), pp.232112. ⟨10.1063/1.2402261⟩. ⟨hal-03350260⟩

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