Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

S. Dubois; O. Palais; P. Ribeyron

doi:10.1063/1.2402261

Journal Articles Applied Physics Letters Year : 2006

Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

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S. Dubois

Function : Author

O. Palais

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

P. Ribeyron

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Physics [physics]

Olivier Palais : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-03350260

Submitted on : Tuesday, September 21, 2021-11:01:12 AM

Last modification on : Wednesday, February 8, 2023-5:11:19 PM

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hal-03350260 , version 1 (21-09-2021)

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HAL Id : hal-03350260 , version 1
DOI : 10.1063/1.2402261

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S. Dubois, O. Palais, P. Ribeyron. Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon. Applied Physics Letters, 2006, 89 (23), pp.232112. ⟨10.1063/1.2402261⟩. ⟨hal-03350260⟩

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Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

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