Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films
Résumé
Structural and magnetic properties of Mn5 (SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and
anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit
interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on
Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with
controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface
with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable
to previous works done in bulk. Reflection high-energy electron diffraction diagrams and X-ray diffraction
profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity
degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all
Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to
0.05 μB /Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3
compound.
Origine : Publication financée par une institution
Licence : CC BY NC - Paternité - Pas d'utilisation commerciale
Licence : CC BY NC - Paternité - Pas d'utilisation commerciale
